The University had been preparing for semiconductors research for the last 17 years before establishing this center. This institute seeks to research the physical phenomena of nano-scaled semiconductor structure and new materials, working together with basic science and highly advanced technology.
It is concerned with understanding, on a microscopic scale, the many and varied properties of bulk and layered semiconductors, and using this understanding to develop new materials with novel properties, eventually to realize multinary bits quantum functional semiconductor devices.
This often involves the development of new concepts to describe the quantum functional behavior of interacting semiconductor systems.
The research in the center spans a wide variety of different types of materials: Ga(Mn)As, AlAs, HgCdTe, Ga(Mn)N, magnetic materials, (in) organic materials, and their heterostructures (quantum wells, wires and dots), and uses a wide variety of different techniques: optical, magnetic, electrical, and X-ray diffraction as well as theory.
Based on this, it intends to overcome the future technical limitations that the existing semiconductor devices may have, and to make semiconductor devices of a new concept that would change the social paradigm. It also aims at cultivating competent talented scientist with international competitiveness and, to devote itself to society and the development of advanced scientific technology.
The institute has equipped itself with highly advanced equipment such as Nitride MBE (Riber compact 21S), MCT MBE (Riber MBE 32P), DMS MBE (Riber MBE 500), LPE (Liquid Phase Epitaxy), SEM (Scanning Electron Microscopy) & CL (Cathodoluminesence) EDX, Multi mode SPM (for STM, AFM, LFM, MFM together), DCXD (Double Crystal X-ray Diffractometer), AES - 400 (combine AES & SIMS), SIMS (Secondary Ion Mass Spectroscopy), PL (Photoluminesence), PLD(Pulsed Laser Deposition) system, and SQUID, and a pure room of class 1000. It also has competent researchers who have made excellent results in theoretical research and experiments.
This institute is enjoying full support from the University. In order to systematically research semiconductors of a new concept and function, comprehensive research of structure, new materials, and elemental physics should be done. In the area of structure research, it attempts to understand formation of self assembled nano structure and the quantum phenomena of them.
In the area of new material research, it is focusing on development of new materials that can replace the existing semiconductor materials covering such as research of new magnetic semiconductor materials and spin behavior of their structures, research of wiring of semiconductor point array and 10nm soft lithography using organic semiconductors, and research of wiring of semiconductor point array by use of nano structure.
This institute has constructed close international cooperation through holding international scientific meetings, inviting renowned scientists, and visiting research institutes, in order to develop itself to an international research center, to find out excellent overseas research groups, and to understand their research trends.
Besides the international cooperation, it has also built up cooperation with companies, and by virtue of it, it is doing research of "Buffer layer growth on GaAs plate for GMR material growth" and "Silicon-on-Sapphire epi growth and element characteristics" for KEC and Hesed Technology respectively. This institute has applied for a patent of its research result. In addition, it provides equipment support for companies.
The organizations that the institute has made joint-cooperation with are as follows: